Resistive switching characteristics of Al2O3/ZnO bilayer thin films for flexible memory applications

  • Zhipeng Wu
  • Jun Zhu
  • Libing Fang

Abstract

Unipolar resistive switching behavior of the ZnO and Al2O3/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. X-ray diffraction results indicated that ZnO film has a dominant peak at (002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of Al2O3/ZnO films had stable resistive switching behaviors with good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1V, which was better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmic’s behavior. The endurance of the BL device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications.

Published
May 26, 2017
How to Cite
WU, Zhipeng; ZHU, Jun; FANG, Libing. Resistive switching characteristics of Al2O3/ZnO bilayer thin films for flexible memory applications. OAHOST , Volume 1, Number 1, Artical Number 4, may 2017. Available at: <http://oahost.org/index.php/journal/article/view/48>. Date accessed: 22 oct. 2017.
Section
Article